BGA622L7 silicon germanium wide band low noise amplifier mmic data sheet, nov. 2004 never stop thinking. silicon discretes
edition 2004-11-04 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen, germany ? infineon technologies ag 2004 all rights reserved. attention please! the information herein is given to describe certain co mponents and shall not be considered as warranted char- acteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices pleas e contact your nearest infin- eon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dang erous substances. for information on the types in question please contact your near est infineon technologies office. infineon technologies components may only be used in lif e-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
for questions on technology, delivery and prices please contact the infineon technologies offices in germany or the infineon technologies companies and representatives worldwide: see our webpage at http://www.infineon.com BGA622L7 data sheet revision history: 2004-11-04 previous version: 2004-07-27 page subjects (major changes since last revision)
data sheet 4 2004-11-04 esd: electrostatic discharge sensitive device, observe handling precaution! type package marking chip BGA622L7 p-tslp-7-1 br t1535 silicon germanium wide band low noise amplifier BGA622L7 1 p-tslp-7-1 2 3 6 5 4 7 features ? high gain, |s 21 | 2 =17.5 db at 1.575 ghz |s 21 | 2 =16.8 db at 1.9 ghz |s 21 | 2 =16.2 db at 2.14 ghz |s 21 | 2 =15.5 db at 2.4 ghz low noise figure, nf=1.0 db at 1.575 ghz operating frequency range 0.5 - 6 ghz typical supply voltage: 2.75v on/off - switch output-match on chip, input pre-matched low external part count tiny p-tslp-7-1 leadless package 70 ghz f t - silicon germanium technology applications lna for gsm, gps, dcs, pcs, umts, bluetooth, ism and wlan vcc,4 out, 5 gnd,7 in,2 on/off 10k description the BGA622L7 is a wide band low noise amplifier, based on infineon technologies? silicon germanium technology b7hf. the out-pin is simultaneously used for rf out and on/off switch. this functionality can be accessed using a rf-choke at the out pin, where a dc level of 0 v or an open switches the device on and a dc level of vcc switches the device off. while the device is switched off, it provides an insertion loss of 23 db together with a high iip3 up to 24 dbm at gps frequencies.
parameter symbol value unit voltage at pin vcc v cc 3.5 v voltage at pin out v out 4 v current into pin in i in 0.1 ma current into pin out i out 1 ma current into pin vcc i vcc 10 ma rf input power p in 6 dbm total power dissipation, t s < 142 c 1) t s is measured on the ground lead at the soldering point 1) p tot 35 mw junction temperature t j 150 c ambient temperature range t a -65 ... +150 c storage temperature range t stg -65 ... +150 c thermal resistance: junction-soldering point r th js 240 k/w BGA622L7 data sheet 5 2004-11-04 maximum ratings note: all voltages refer to gnd-node electrical characteristics at t a =25c (measured according to fig. 1) vcc=2.75 v, frequency=1.575 gh z, unless otherwise specified parameter symbol min. typ. max. unit insertion power gain |s 21 | 2 17.5 db insertion power gain (off-state) |s 21 | 2 -23 db input return loss (on-state) rl in 6 db output return loss (on-state) rl out 13 db noise figure (z s =50 ) f 50 1.0 db input third order intercept point 1) ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 from 0.1 to 6 ghz 1) (on-state) f=1mhz, p in =-28dbm iip 3 -2 dbm input third order intercept point 1) (off-state) f=1mhz, p in =-8dbm iip 3 24 dbm input power at 1db gain compression p -1db -20 dbm total device off current, v cc =2.75v, v out =v cc i tot-off 260 a total device on current, v cc =2.75v i tot-on 5.8 ma
BGA622L7 data sheet 6 2004-11-04 electrical characteristics at t a =25c (measured according to fig. 1) vcc=2.75 v, frequency=2.14 ghz, unless otherwise specified parameter symbol min. typ. max. unit insertion power gain |s 21 | 2 16.2 db insertion power gain (off-state) |s 21 | 2 -20 db input return loss (on-state) rl in 7 db output return loss (on-state) rl out 13 db noise figure (z s =50 ) f 50 1.1 db input third order intercept point 1) ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 from 0.1 to 6 ghz 1) (on-state) f=1mhz, p in =-28dbm iip 3 0 dbm input third order intercept point 1) (off-state) f=1mhz, p in =-8dbm iip 3 22 dbm input power at 1db gain compression p -1db -16 dbm figure 1 s-parameter test circuit (loss-free microstrip line) top view 150pf out in 1 BGA622L7 p-tslp-7-1 3 2 5 6 4 dc, 2.75v 7
BGA622L7 data sheet 7 2004-11-04 power gain |s 21 | 2 , g ma = f(f) v cc = 2.75v, i tot?on = 5.8ma 0 1 2 3 4 5 6 0 5 10 15 20 25 frequency [ghz] |s 21 | 2 , g ma [db] |s 21 | 2 g ma reverse isolation |s 12 | = f(f) v cc = 2.75v, i tot?on = 5.8ma 0 1 2 3 4 5 6 ?50 ?45 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 12 | [db] matching |s 11 |, |s 22 | = f(f) v cc = 2.75v, i tot?on = 5.8ma 0 1 2 3 4 5 6 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 off gain |s 21 | 2 = f(f) v cc = 2.75v, v out = 2.75v, i tot?off = 0.3ma 0 1 2 3 4 5 6 ?50 ?45 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 21 | 2 [db]
BGA622L7 data sheet 8 2004-11-04 device current i tot?on = f(t a , v cc ) v cc = parameter in v ?40 ?20 0 20 40 60 80 5 5.5 6 6.5 7 7.5 8 8.5 t a [c] i tot?on [ma] 2.6 2.8 3 3.2 3.4 device current i tot?on = f(v cc , t a ) t a = parameter in c 2.6 2.8 3 3.2 3.4 5 5.5 6 6.5 7 7.5 8 8.5 v cc [v] i tot?on [ma] ?40 20 85 stability k, b 1 = f(f) v cc = 2.75v, i tot?on = 5.8ma 0 1 2 3 4 5 6 0 0.5 1 1.5 2 2.5 3 3.5 4 frequency [ghz] k, b 1 k b1 noise figure f = f(f) v cc = 2.75v, i tot?on = 5.8ma, z s = 50 ? 0 0.5 1 1.5 2 2.5 3 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 frequency [ghz] f [db]
BGA622L7 data sheet 9 2004-11-04 package outline tape loading orientation 1.35 4 1.85 8 0.5 0.1 0.05 max. +0.05 0.4 dimension applies to plated terminals pin 1 mark area 1) 0.035 1.2 0.2 0.035 1) 1) 0.035 0.2 0.035 1.1 1) 1 32 456 7 1) s 0.03 s 2x 0.05 1.3 a 0.5 0.5 0.85 0.85 2 0.1 a m b 0.05 2x 0.1 a m b 0.1 a m b 6x 6x b m a 0.1 b
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